|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
this is information on a product in full production. july 2014 docid026268 rev 2 1/16 STH245N75F3-6 automotive-grade n-channel 75 v, 2.6 m ? typ., 180 a stripfet? f3 power mosfet in a h2pak-6 package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? conduction losses reduced ? low profile, very low parasitic inductance applications ? switching applications description this device is an n-channel power mosfet developed using stripfet? f3 technology. it is designed to minimize on-resistance and gate charge to provide superior switching performance. h 2 pak-6 1 tab 7 order code v ds r ds(on) max. i d STH245N75F3-6 75 v 3.0 m ? 180 a table 1. device summary order code marking packages packaging STH245N75F3-6 245n75f3 h 2 pak-6 tape and reel www.st.com
contents STH245N75F3-6 2/16 docid026268 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 docid026268 rev 2 3/16 STH245N75F3-6 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 75 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25 c 180 a i d drain current (continuous) at t c = 100 c 170 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 720 a p tot total dissipation at t c = 25 c 300 w derating factor 2 w/c e as (3) 3. starting t j = 25 c, i d = 60 a, v dd = 15 v. single pulse avalanche energy 600 mj t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.5 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 2 oz cu. thermal resistance junction-pcb max 35 c/w electrical characteristics STH245N75F3-6 4/16 docid026268 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 75 v i dss zero gate voltage drain current v gs = 0, v ds = 75 v 10 a v gs = 0, v ds = 75 v, t c =125 c 100 a i gss gate body leakage current v ds = 0, v ds = 20 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 90 a 2.6 3.0 m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds = 25 v, f = 1 mhz - 6800 - pf c oss output capacitance - 1100 - pf c rss reverse transfer capacitance -50-pf q g total gate charge v dd = 37.5 v, i d = 120 a, v gs = 10 v (see figure 14 ) -87-nc q gs gate-source charge - 30 - nc q gd gate-drain charge - 26 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 37.5 v, i d = 60 a r g = 4.7 ? , v gs = 10 v, (see figure 13 ) -25 -ns t r rise time - 70 - ns t d(off) turn-off delay time - 100 - ns t f fall time - 15 - ns docid026268 rev 2 5/16 STH245N75F3-6 electrical characteristics 16 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 180 a i sd (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 720 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage v gs = 0, i sd = 120 a - 1.5 v t rr reverse recovery time i sd = 120 a,di/dt = 100 a/s v dd = 30 v, t j = 150 c (see figure 15) -80 ns q rr reverse recovery charge - 180 nc i rrm reverse recovery current - 4.5 a electrical characteristics STH245N75F3-6 6/16 docid026268 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=175c tc=25c single pulse am08147v1 i d 150 100 50 0 0 1 v ds (v) 3 (a) 2 200 250 5v 6v v gs =10v 300 350 4 5 am05545v1 , ' 9 * 6 9 $ 9 ' 6 9 + 9 r ds(on) 2.70 2.60 2.50 2.40 0 40 i d (a) (m ) 20 60 2.80 2.90 v gs =10v 100 80 120 160 140 180 am08148v1 docid026268 rev 2 7/16 STH245N75F3-6 electrical characteristics 16 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics 9 * 6 w k 7 - ? & |